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triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 1 not recommended for new designs triquint recommends the tga4505-epu be used for new designs 24-31 ghz ka band hpa primary applications ? satellite ground terminal ? point-to-point radio key features ? 0.25 um phemt technology ? 23 db nominal gain ? 34.5 dbm nominal p1db ? 40 dbm imd3 typical ? bias 6 v @ 2.1 a chip dimensions 4.3 mm x 3.0 mm x 0.05 mm fixtured data bias conditions: vd = 6v, id = 2.1a 5% 7 9 11 13 15 17 19 21 23 25 27 23 24 25 26 27 28 29 30 31 32 frequency (ghz) gain (db) product description the triquint TGA4501-SCC is a compact 3 watt high power amplifier mmic for ka-band applications. the part is designed using triquints proven standard 0.25 um gate power phemt production process. the tga4501 provides a nominal 34.5 dbm of output power at 1 db gain compression from 24-31 ghz with a small signal gain of 23 db. the part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals, point to point radio and lmds. the TGA4501-SCC is 100% dc and rf tested on-wafer to ensure performance compliance. 25 27 29 31 33 35 37 27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 frequency (ghz) pout @ p1db (dbm)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 2 not recommended for new designs triquint recommends the tga4505-epu be used for new designs table i maximum ratings symbol parameter 5/ value notes v + positive supply voltage 8 v 4/ v - negative supply voltage range -5v to 0v i + positive supply current (quiescent) 3.0 a 4/ | i g | gate supply current 62 ma p in input continuous wave power 24 dbm p d power dissipation 18.4 w 3/ 4/ t ch operating channel temperature 150 0 c1/ 2 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings apply to each individual fet. 2/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced from 7.4 e+6 to 4.6 e+5 hours. 4/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 5/ these ratings represent the maximum operable values for this device.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 3 not recommended for new designs triquint recommends the tga4505-epu be used for new designs table ii dc probe test (ta = 25 c, nominal) limits notes symbol min max units 1/ i dss(q35) 15 70.5 ma 1/ g m (q35) 33 79.5 ms 1/, 2/ |v p(q1, q2, q35) | 0.5 1.5 v 1/, 2/ |v bvgs(q35) | 830 v 1/, 2/ |v bvgd(q35) | 11 30 v 1/ q35 is a 150 um test fet 2/ v p , v bvgd , and v bvgs are negative.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 4 not recommended for new designs triquint recommends the tga4505-epu be used for new designs table iv thermal information* parameter test conditions t ch ( o c) r q jc ( c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) vd = 6v i d = 2.048 a pdiss = 12.288 w 127.65 4.69 7.4e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. * this information is a result of a thermal model analysis. table iii rf characterization table (t a = 25 c, nominal) (vd = 6v, id = 2.1a 5%) limits symbol parameter test condition min typ max units gain small signal gain f = 24-31 ghz 18 23 db irl input return loss f = 24-31 ghz --- -6 ---- db orl output return loss f = 24-31 ghz --- -12 --- db pwr output power @ p1db f = 27-31 ghz 34 35 --- dbm imr3 imr3 @ scl = p1db C 10db f = 30 ghz --- 29 --- dbc imd3 output imd3 f = 30 ghz pin = 0 dbm --- 40 --- dbc note: table iii lists the rf characteristics of typical devices as determined by fixtured measurements.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 5 not recommended for new designs triquint recommends the tga4505-epu be used for new designs fixtured data 7 9 11 13 15 17 19 21 23 25 27 23 24 25 26 27 28 29 30 31 32 frequency (ghz) gain (db) bias conditions: vd = 6 v, id = 2.1 a 5% 25 27 29 31 33 35 37 27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 frequency (ghz) pout @ p1db (dbm)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 6 not recommended for new designs triquint recommends the tga4505-epu be used for new designs bias conditions: vd = 6 v, id = 2.1 a 5% fixtured data -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 23 24 25 26 27 28 29 30 31 32 frequency (ghz) output return loss (db) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 23 24 25 26 27 28 29 30 31 32 frequency (ghz) input return loss (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 7 not recommended for new designs triquint recommends the tga4505-epu be used for new designs fixtured data bias conditions: vd = 6 v, id = 2.1 a 5% fixured data taken @ 30 ghz 0 5 10 15 20 25 30 35 40 45 50 16 18 20 22 24 26 28 30 32 fundamental output power/tone (dbm) imd3 (dbc) f = 27 ghz f = 28 ghz f = 29 ghz f = 30 ghz 19 22 25 28 31 34 37 40 43 -6-4-20246810121416 pin (dbm) pout (dbm), oip3 (dbm) 15 16 17 18 19 20 21 22 23 24 gain (db) pout oip3 gain
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 8 not recommended for new designs triquint recommends the tga4505-epu be used for new designs recommended chip assembly & bonding diagram both-sided biasing option gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 9 not recommended for new designs triquint recommends the tga4505-epu be used for new designs gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. alternative chip assembly & bonding diagram single-side biasing option
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 10 not recommended for new designs triquint recommends the tga4505-epu be used for new designs mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. note: rf ground is backside of mmic 0.000 (0.000) 0.135 (0.005) 0.182 (0.007) 0.316 (0.012) 0.681 (0.027) 1.748 (0.069) 1.932 (0.076) 2.096 (0.083) 3.210 (0.126) 3.711 (0.146) 4.123 (0.162) 4.290 (0.169) 0.190 (0.007) 0.328 (0.013) 0.679 (0.027) 1.754 (0.069) 1.932 (0.076) 2.085 (0.082) 3.185 (0.125) 3.737 (0.147) 4.157 (0.164) 4.126 (0.162) 0.000 (0.000) 0.114 (0.004) 0.136 (0.005) 1.500 (0.059) 2.900 (0.114) 3.019 (0.112) 2.884 (0.114) 1.522 (0.060) 0.119 (0.004) 0.135 (0.005) %rqgsdg %rqgsdg %rqgsdg %rqgsdg %rqgsdg %rqgsdg %rqgsdg %rqgsdg %rqgsdg %rqgsdg 5),qsxw 5)2xwsxw '&*1' 9* 9' 9* '&*1' 9' 9* 9' [[ [[ [[ [[ [[ [[ [[ [[ [[ [[ 8qlwv0loolphwhuvlqfkhv 7klfnqhvvuhihuhqfhrqo\ &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurierqgsdg &klsvl]h *1',6%$&.6,'(2)00,& 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 19, 2003 TGA4501-SCC 11 not recommended for new designs triquint recommends the tga4505-epu be used for new designs assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c (for 30 sec max). an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be ut ilized. coefficient of thermal expansion matching is critical for long-term reliab ility. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 ? c.

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